Materials Damage Research Breakdown Characterization of n+/p multiguarded Diodes

Materials Damage Research Breakdown Characterization of n+/p multiguarded Diodes G. Bolla, D. Bortoletto, Department of Physics, Purdue University G.P. Grim, R.L. Lander, and D.E. Pellett, Dept. of Physics, University of California Davis Zheng Li, Brookhaven National Laboratory

Single sided, multiguarded, n+/p PIN diodes have been processed at BNL with high resistivity silicon. Various designs, from one to eleven guardrings, with alternating p-stops have been characterized to evaluate the n+/p technology as a candidate single side substitute to the usual double sided p+/n or n+/n devices. Exposure to 67 Mev protons with an integrated fluence of 3.x10**14 p/cm**2 has been performed at the UC Davis Crocker Nuclear Laboratory and the response to irradiation is compared with the preirradiation performances.